sym bol 1f1g 1f2g 1F3G 1f4g 1f5g 1f6g 1f7g unit characteristic 1f1g ? 1f7g features ! ! lo w forward voltage drop ! high current capability a b a ! high reliability ! high surge current capability mec h anical data c ! ca s e: r-1, molded plastic d ! terminals: plated leads solderable per mil-std-202, method 208 ! polarity: cathode band ! weight: 0.181 grams (approx.) ! mounting position: any ! marking: type number ! lead free: for rohs / lead free version maximum ra t ings and electrical characteristics @t a =25c unl ess otherwise specified single phase, half wave, 60hz, resistive or inductive load. for capacitive load, derate current by 20%. r-1 dim m i n max a 20. 0 ? b 2.90 3. 50 c 0. 53 0. 64 d 2.20 2. 60 all di m ensions in mm 1f1g ? 1f7g 1 of 2 *glass pas s ivated forms are available upon request note: 1. leads maintained at ambient temperature at a distance of 9.5mm from the case 2. measured with if = 0.5a, ir = 1.0a, irr = 0.25a. see figure 1. 3. measured at 1.0 mhz and applied reverse voltage of 4.0v d.c. peak repet itive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r 50 100 200 400 600 800 1000 v rms revers e voltage v r(rms) 35 70 140 280 420 560 700 v av erage rec tified output current (note 1) @t a = 55 c i o 1.0 a non-repeti t ive peak forward surge current 8.3ms single half sine-wave superimposed on rated load (jedec method) i fsm 25 a forward vo l tage @i f = 1. 0a v fm 1.3 v peak revers e current @t a = 25c a t rated dc blocking voltage @t a = 100c i rm 5.0 100 a reverse rec o very time (note 2) t rr 150 250 500 ns ty pi cal junction capacitance (note 3) c j 15 pf operating t emperature range t j -65 to +150 c storage t emperature range t stg -65 to +150 c z ibo seno electronic engineering co., ltd. www.senocn.com 1.0 a gl ass passivated fast recovery diode gl as s passivated die construction a l l d a t a s h e e t
1f1g ? 1f7g 2 of 2 1f1g ? 1f7g i , peak for ward surge current (a) fsm 0 10 20 30 1 10 100 number of cycles at 60 hz fig. 3 peak forward surge current pulse width 8.3ms single half-sine-w ave (jedec method) 1 10 100 1 10 100 c , cap acit ance (pf) j v , reverse vol tage (v) fig. 4 typical junction capacitance r t = 25c f = 1mhz j 0 0.2 0.4 0.6 0.8 1.0 25 50 75 100 125 150 175 200 i , a verage fwd rectified current (a) (av) t , ambient tempera ture (c) fig. 1 forward derating curve a single phase half-wave 60 hz resistive or inductive load 50v dc approx 50 ni (non-inductive) w 10 ni w 1.0 ni w oscilloscope (note 1) pulse generator (note 2) device under test t rr settimebasefor5 /10ns/cm +0.5a 0a -0.25a -1.0a notes: 1. rise t ime = 7.0ns max. input impedance = 1.0m , 22pf. 2. rise time = 10ns max. input impedance = 50 . w w fig. 5 reverse recovery time characteristic and test circuit (+) (+) (-) (-) 0.01 0.1 1.0 10 0.6 0.8 1.0 1.2 1.4 i , inst ant aneous fwd current (a) f v , inst ant aneous forward voltage (v) fig. 2 typical forward characteristics f t = 25c j pulse width = 300 s z ibo seno electronic engineering co., ltd. www.senocn.com a l l d a t a s h e e t
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